BUK9515-100A,127 datasheet

Маркировка

BUK9515-100A,127
Производитель

NXP Semiconductors
Описание

NXP Semiconductors BUK9515-100A,127 Configuration: Single Continuous Drain Current: 75 A Current - Continuous Drain (id) @ 25?° C: 75A Drain To Source Voltage (vdss): 100V Drain-source Breakdown Voltage: 100 V Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: - Gate-source Breakdown Voltage: +/- 10 V Input Capacitance (ciss) @ Vds: 8600pF @ 25V Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: Through Hole Mounting Type: Through Hole Package / Case: TO-220AB-3 Power - Max: 230W Power Dissipation: 230 W Rds On (max) @ Id, Vgs: 14.4 mOhm @ 25A, 10V Resistance Drain-source Rds (on): 0.0144 Ohms Series: TrenchMOS?„? Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 2V @ 1mA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 100 V Gate-Source Breakdown Voltage: +/- 10 V Rds On: 14.4 mOhms Brand: NXP Semiconductors Fall Time: 130 ns Rise Time: 130 ns Factory Pack Quantity: 50 Typical Turn-Off Delay Time: 400 ns Part # Aliases: BUK9515-100A Other Names: 934055410127, BUK9515-100A
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13 шт.
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